Retention characteristics of resistance switching memory using Si/CaF<sub>2</sub>/CdF<sub>2</sub> quantum-well structures

2011 International Conference on Solid State Devices and Materials

Sep 27, 2011 - Sep 30, 2011
Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan

M. Watanabe¹, K. Uryu¹ (1.Tokyo Tech , Japan)