High Speed and High Efficiency Si Optical Modulator with MOS Junction, Using Large-Grain of Poly-Silicon Gate

J. Fujikata; M. Takahashi; S. Takahashi; T. Akagawa; M. Noguchi; T. Horikawa; T. Nakamura; Y. Arakawa

doi:https://doi.org/10.7567/SSDM.2012.A-1-2

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[A-1-2] High Speed and High Efficiency Si Optical Modulator with MOS Junction, Using Large-Grain of Poly-Silicon Gate

J. Fujikata^1,2, M. Takahashi^1,3, S. Takahashi^1,2, T. Akagawa^1,2, M. Noguchi^1,2, T. Horikawa^1,3, T. Nakamura^1,2, Y. Arakawa^1,4 (1.PECST, 2.PETRA, 3.AIST, 4.Univ. of Tokyo , Japan)

https://doi.org/10.7567/SSDM.2012.A-1-2

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