[A-6-4] GaAs/AlAs multilayer cavity with Er-doped InAs quantum dots embedded in extremely thin strain-relaxed InGaAs barriers for ultrafast all-optical switches

K. Morita¹、H. Ueyama¹、Y. Yasunaga¹、Y. Nakagawa^1,2、T. Kitada¹、T. Isu¹ (1.Univ. of Tokushima、2.NICHIA Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.A-6-4