[B-2-1] New erase verify scheme for improving the cycling endurance of 2xnm NAND flash cell

J. Kim¹、T. Youn¹、S. Seo¹、N. Park¹、S. Yi¹、E. Park¹、H. Kim¹、H. Yang¹、K. Noh¹、S. Park¹、S. Lee¹ (1.SK hynix Inc. , South Korea)

https://doi.org/10.7567/SSDM.2012.B-2-1