New erase verify scheme for improving the cycling endurance of 2xnm NAND flash cell

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

J. Kim¹, T. Youn¹, S. Seo¹, N. Park¹, S. Yi¹, E. Park¹, H. Kim¹, H. Yang¹, K. Noh¹, S. Park¹, S. Lee¹ (1.SK hynix Inc. , South Korea)