[B-4-2] Effect of the active layer thickness and temperature on the switching kinetics of GeS2-based Conductive Bridge Memories

G. Palma¹、E. Vianello¹、G. Molas¹、C. Cagli¹、F. Longnos²、J. Guy¹、M. Reyboz¹、C. Carabasse¹、M. Bernard¹、F. Dahmani²、D. Bretegnier²、J. Liebault²、B. De Salvo¹ (1.CEA, LETI, MINATEC Campus、2.Altis Semiconductor , France)

https://doi.org/10.7567/SSDM.2012.B-4-2