[B-4-2] Effect of the active layer thickness and temperature on the switching kinetics of GeS2-based Conductive Bridge Memories

G. Palma¹, E. Vianello¹, G. Molas¹, C. Cagli¹, F. Longnos², J. Guy¹, M. Reyboz¹, C. Carabasse¹, M. Bernard¹, F. Dahmani², D. Bretegnier², J. Liebault², B. De Salvo¹ (1.CEA, LETI, MINATEC Campus, 2.Altis Semiconductor , France)

https://doi.org/10.7567/SSDM.2012.B-4-2