[B-4-3] Optimization of Conductive Filament of Oxide-based RRAM for Low Operation Current by Stochastic Simulation

P. Huang¹、Y. X. Deng¹、B. Gao¹、B. Chen¹、F. F. Zhang¹、D. Y¹、L. F. Liu¹、G. Du¹、J. F. Kang¹、X. Y. Liu¹ (1.Peking Univ. , P. R. China)

https://doi.org/10.7567/SSDM.2012.B-4-3