[B-4-3] Optimization of Conductive Filament of Oxide-based RRAM for Low Operation Current by Stochastic Simulation

P. Huang¹, Y. X. Deng¹, B. Gao¹, B. Chen¹, F. F. Zhang¹, D. Y¹, L. F. Liu¹, G. Du¹, J. F. Kang¹, X. Y. Liu¹ (1.Peking Univ. , P. R. China)

https://doi.org/10.7567/SSDM.2012.B-4-3