Switching Model of TaOx-based Non-polar Resistive Random Access Memory

X. Tong; W. Wu; Z. Liu; X. A. Tran; H. Y. Yu; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2012.B-5-1

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[B-5-1] Switching Model of TaOx-based Non-polar Resistive Random Access Memory

X. Tong¹、W. Wu¹、Z. Liu¹、X. A. Tran²、H. Y. Yu³、Y. C. Yeo¹ (1.National Univ. of Singapore、2.Nanyang Tech. Univ. , Singapore、3.South Univ. of Sci. and Tech. , China)

https://doi.org/10.7567/SSDM.2012.B-5-1

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