Switching Model of TaOx-based Non-polar Resistive Random Access Memory

X. Tong; W. Wu; Z. Liu; X. A. Tran; H. Y. Yu; Y. C. Yeo

doi:https://doi.org/10.7567/SSDM.2012.B-5-1

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[B-5-1] Switching Model of TaOx-based Non-polar Resistive Random Access Memory

X. Tong¹, W. Wu¹, Z. Liu¹, X. A. Tran², H. Y. Yu³, Y. C. Yeo¹ (1.National Univ. of Singapore, 2.Nanyang Tech. Univ. , Singapore, 3.South Univ. of Sci. and Tech. , China)

https://doi.org/10.7567/SSDM.2012.B-5-1

▲