The Japan Society of Applied Physics

[B-5-1] Switching Model of TaOx-based Non-polar Resistive Random Access Memory

X. Tong1, W. Wu1, Z. Liu1, X. A. Tran2, H. Y. Yu3, Y. C. Yeo1 (1.National Univ. of Singapore, 2.Nanyang Tech. Univ. , Singapore, 3.South Univ. of Sci. and Tech. , China)

https://doi.org/10.7567/SSDM.2012.B-5-1