The Japan Society of Applied Physics

[B-5-2] Low power and improved switching properties of selector-less Ta2O5 based ReRAM using Ti-rich TiN electrode

B. Kim1, W. Kim1, H. Kim1, K. Jung1, W. Park1, B. Seo1, M. Joo1, K. Lee1, K. Hong1, S. Park1 (1.SK Hynix Inc. , Korea)

https://doi.org/10.7567/SSDM.2012.B-5-2