[B-5-2] Low power and improved switching properties of selector-less Ta2O5 based ReRAM using Ti-rich TiN electrode

B. Kim¹、W. Kim¹、H. Kim¹、K. Jung¹、W. Park¹、B. Seo¹、M. Joo¹、K. Lee¹、K. Hong¹、S. Park¹ (1.SK Hynix Inc. , Korea)

https://doi.org/10.7567/SSDM.2012.B-5-2