[B-5-2] Low power and improved switching properties of selector-less Ta2O5 based ReRAM using Ti-rich TiN electrode

B. Kim¹, W. Kim¹, H. Kim¹, K. Jung¹, W. Park¹, B. Seo¹, M. Joo¹, K. Lee¹, K. Hong¹, S. Park¹ (1.SK Hynix Inc. , Korea)

https://doi.org/10.7567/SSDM.2012.B-5-2