[B-6-2] Impacts of Device Architecture and Low Current Operation on the Resistive Switching of HfOx Nanoscale Memory
Y. S. Chen1、P. S. Chen2、H. Y. Lee1、K. H. Tsai1、T. Y. Wu1、C. H. Tsai1、W. S. Chen1、P. Y. Gu1、F. Chen1、M. J. Tsai1
(1.Indus. Tech. Res. Inst.、2.MingShin Univ. of Science & Tech. , Taiwan)
https://doi.org/10.7567/SSDM.2012.B-6-2