Impacts of Device Architecture and Low Current Operation on the Resistive Switching of HfOx Nanoscale Memory

Y. S. Chen; P. S. Chen; H. Y. Lee; K. H. Tsai; T. Y. Wu; C. H. Tsai; W. S. Chen; P. Y. Gu; F. Chen; M. J. Tsai

doi:https://doi.org/10.7567/SSDM.2012.B-6-2

[B-6-2] Impacts of Device Architecture and Low Current Operation on the Resistive Switching of HfOx Nanoscale Memory

Y. S. Chen¹, P. S. Chen², H. Y. Lee¹, K. H. Tsai¹, T. Y. Wu¹, C. H. Tsai¹, W. S. Chen¹, P. Y. Gu¹, F. Chen¹, M. J. Tsai¹ (1.Indus. Tech. Res. Inst., 2.MingShin Univ. of Science & Tech. , Taiwan)

https://doi.org/10.7567/SSDM.2012.B-6-2

2012 International Conference on Solid State Devices and Materials

[B-6-2] Impacts of Device Architecture and Low Current Operation on the Resistive Switching of HfOx Nanoscale Memory