Improved Resistive-switching Performance of HfO2-based RRAM devices by Reduction Effect of Hydrogen Annealing: Defect Engineering

S. Kim; D. Lee; J. Park; S. Jung; W. Lee; J. Shin; J. Woo; G. Choi; E. Cha; H. Hwang

doi:https://doi.org/10.7567/SSDM.2012.B-6-4

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[B-6-4] Improved Resistive-switching Performance of HfO2-based RRAM devices by Reduction Effect of Hydrogen Annealing: Defect Engineering

S. Kim¹, D. Lee¹, J. Park¹, S. Jung¹, W. Lee¹, J. Shin¹, J. Woo¹, G. Choi¹, E. Cha¹, H. Hwang¹ (1.Gwangju Inst. of Science and Tech. , Republic of Korea)

https://doi.org/10.7567/SSDM.2012.B-6-4

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