[B-6-4] Improved Resistive-switching Performance of HfO2-based RRAM devices by Reduction Effect of Hydrogen Annealing: Defect Engineering

S. Kim¹、D. Lee¹、J. Park¹、S. Jung¹、W. Lee¹、J. Shin¹、J. Woo¹、G. Choi¹、E. Cha¹、H. Hwang¹ (1.Gwangju Inst. of Science and Tech. , Republic of Korea)

https://doi.org/10.7567/SSDM.2012.B-6-4