[B-6-5L] Physical Guiding Principles for High Quality ReRAM Stack with Al2O3 O Vacancy Barrier Layer

M. Y. Yang¹, K. Kamiya¹, B. Magyari Kope², M. Niwa¹, Y. Nishi², K. Shiraishi¹ (1.Univ. of Tsukuba , Japan, 2.Univ. of Stanford , USA)

https://doi.org/10.7567/SSDM.2012.B-6-5L