[B-6-5L] Physical Guiding Principles for High Quality ReRAM Stack with Al2O3 O Vacancy Barrier Layer

M. Y. Yang¹、K. Kamiya¹、B. Magyari Kope²、M. Niwa¹、Y. Nishi²、K. Shiraishi¹ (1.Univ. of Tsukuba , Japan、2.Univ. of Stanford , USA)

https://doi.org/10.7567/SSDM.2012.B-6-5L