Set Voltage Statistics in Unipolar HfO2-Based RRAM

S. Long; C. Cagli; J. Buchley; Q. Liu; H. Lv; X. Lian; E. Miranda; D. Jimenez; M. Liu; J. Sune

doi:https://doi.org/10.7567/SSDM.2012.B-7-3

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[B-7-3] Set Voltage Statistics in Unipolar HfO2-Based RRAM

S. Long^1,2、C. Cagli³、J. Buchley³、Q. Liu¹、H. Lv¹、X. Lian²、E. Miranda²、D. Jimenez²、M. Liu¹、J. Sune² (1.Inst. of Microelectronics, Chinese Academy of Sciences , China、2.Universitat Autonoma de Barcelona , Spain、3.CEA, LETI , France)

https://doi.org/10.7567/SSDM.2012.B-7-3

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