Effects of Thin Metal Insertion on Resistive Switching of Flexible ZnO RRAM

C. L. Lin; Y. H. Lai; S. R. Yang; C. M. Wu; Y. H. Yang; C. H. Soh; T. Y. Lin; C. F. Sung; P. C. Juan

doi:https://doi.org/10.7567/SSDM.2012.B-8-2

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[B-8-2] Effects of Thin Metal Insertion on Resistive Switching of Flexible ZnO RRAM

C. L. Lin¹, Y. H. Lai¹, S. R. Yang¹, C. M. Wu¹, Y. H. Yang¹, C. H. Soh¹, T. Y. Lin¹, C. F. Sung², P. C. Juan³ (1.Feng Chia Univ., 2.Indus. Tech. Res. Inst. (ITRI), 3.Mingchi Univ. of Tech. , Taiwan)

https://doi.org/10.7567/SSDM.2012.B-8-2

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