Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-area Metalorganic Vapor Phase Epitaxy

Y. Kohashi; S. Sakita; S. Hara; J. Motohisa

doi:https://doi.org/10.7567/SSDM.2012.C-2-3

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[C-2-3] Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-area Metalorganic Vapor Phase Epitaxy

Y. Kohashi¹, S. Sakita^1,2, S. Hara^1,2, J. Motohisa¹ (1.Graduate School of Info. Sci. and Tech., Hokkaido Univ., 2.Res. Center for Integrated Quantum Electronics, Hokkaido Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.C-2-3

▲