Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-area Metalorganic Vapor Phase Epitaxy

Y. Kohashi; S. Sakita; S. Hara; J. Motohisa

doi:https://doi.org/10.7567/SSDM.2012.C-2-3

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[C-2-3] Control of Diameter and Pitch of InGaAs Nanowire Arrays in Selective-area Metalorganic Vapor Phase Epitaxy

Y. Kohashi¹、S. Sakita^1,2、S. Hara^1,2、J. Motohisa¹ (1.Graduate School of Info. Sci. and Tech., Hokkaido Univ.、2.Res. Center for Integrated Quantum Electronics, Hokkaido Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.C-2-3

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