Efficient Reduction and Restoration of Graphene oxide films as a Channel in Field Effect Transistor: Toward Sensor applications

R. Negishi; K. Kuramoto; Y. Ohno; T. Nishino; T. Yamaguchi; K. Maehashi; K. Matsumoto; K. Ishibashi; Y. Kobayashi

doi:https://doi.org/10.7567/SSDM.2012.C-4-4

[C-4-4] Efficient Reduction and Restoration of Graphene oxide films as a Channel in Field Effect Transistor: Toward Sensor applications

R. Negishi¹、K. Kuramoto¹、Y. Ohno¹、T. Nishino^2,3、T. Yamaguchi²、K. Maehashi¹、K. Matsumoto¹、K. Ishibashi²、Y. Kobayashi¹ (1.Univ. of Osaka、2.RIKEN、3.Sanwa Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.C-4-4

2012 International Conference on Solid State Devices and Materials

[C-4-4] Efficient Reduction and Restoration of Graphene oxide films as a Channel in Field Effect Transistor: Toward Sensor applications