Analysis of Channel Stress Induced by NiPt-silicide and Its Generation Mechanism

M. Mizuo; T. Yamaguchi; S. Kudo; Y. Hirose; H. Kimura; J. Tsuchimoto; N. Hattori

doi:https://doi.org/10.7567/SSDM.2012.D-2-2

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[D-2-2] Analysis of Channel Stress Induced by NiPt-silicide and Its Generation Mechanism

M. Mizuo¹, T. Yamaguchi², S. Kudo², Y. Hirose^1,2, H. Kimura², J. Tsuchimoto², N. Hattori² (1.Renesas Semiconductor Engineering Corp., 2.Renesas Electronics Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.D-2-2

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