Analysis of Channel Stress Induced by NiPt-silicide and Its Generation Mechanism

M. Mizuo; T. Yamaguchi; S. Kudo; Y. Hirose; H. Kimura; J. Tsuchimoto; N. Hattori

doi:https://doi.org/10.7567/SSDM.2012.D-2-2

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[D-2-2] Analysis of Channel Stress Induced by NiPt-silicide and Its Generation Mechanism

M. Mizuo¹、T. Yamaguchi²、S. Kudo²、Y. Hirose^1,2、H. Kimura²、J. Tsuchimoto²、N. Hattori² (1.Renesas Semiconductor Engineering Corp.、2.Renesas Electronics Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.D-2-2

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