[D-4-2] High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain

T. Sada¹、K. Yamamoto¹、H. Yang¹、D. Wang¹、H. Nakashima¹ (1.Kyushu Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.D-4-2