[D-6-3] Comparative Study of Schottky Barrier Height Modulation in S-introduced NiGe/Ge and NiSi/Si Junctions

M. Koike¹、Y. Kamimuta¹、T. Tezuka¹ (1.AIST , Japan)

https://doi.org/10.7567/SSDM.2012.D-6-3