[D-7-3] Low-barrier Hetero Junction to N-type Silicon Using Novel Ultrathin Epitaxial Silicide Consisting of Tungsten-encapsulating Silicon Clusters

N. Okada^1,2、N. Uchida²、T. Kanayama^1,2 (1.Univ. of Tsukuba、2.AIST , Japan)

https://doi.org/10.7567/SSDM.2012.D-7-3