[E-1-5] Systematic Study of Back-Gate Bias Effects in Ultrathin-BOX Tri-gate (UTBT) Transistor with 10nm-Diameter Nanowire Channel

K. Ota¹、M. Saitoh¹、C. Tanaka¹、T. Numata¹ (1.Toshiba Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.E-1-5