[E-3-3] Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility

M. Oda¹、T. Irisawa¹、Y. Kamimuta¹、O. Ichikawa²、T. Tezuka¹ (1.AIST、2.Sumitomo Chemical Co. Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.E-3-3