[E-3-3] Effects of interfacial layer between high-k gate dielectric and InGaAs surface on its inversion layer electron mobility
M. Oda1, T. Irisawa1, Y. Kamimuta1, O. Ichikawa2, T. Tezuka1
(1.AIST, 2.Sumitomo Chemical Co. Ltd. , Japan)
https://doi.org/10.7567/SSDM.2012.E-3-3
