Surface-Orientation/Strain Dependence of Quantum Confinement Effects in Si Monolayers for Future CMOS Devices

T. Mizuno; K. Higa; Y. Nakajima; D. Urata; Y. Abe; H. Akamatsu; Y. Nagata; K. Sato; J. Takehi; T. Sameshima

doi:https://doi.org/10.7567/SSDM.2012.E-7-3

[E-7-3] Surface-Orientation/Strain Dependence of Quantum Confinement Effects in Si Monolayers for Future CMOS Devices

T. Mizuno¹, K. Higa¹, Y. Nakajima¹, D. Urata¹, Y. Abe¹, H. Akamatsu¹, Y. Nagata¹, K. Sato¹, J. Takehi¹, T. Sameshima² (1.Kanagawa Univ., 2.Tokyo Univ. of Agriculture and Tech. , Japan)

https://doi.org/10.7567/SSDM.2012.E-7-3

2012 International Conference on Solid State Devices and Materials

[E-7-3] Surface-Orientation/Strain Dependence of Quantum Confinement Effects in Si Monolayers for Future CMOS Devices