[E-7-4] Quantitative Analysis of Surface Potential Fluctuation at MOS interfaces Using Conductance Method

S .H. Shin¹、N. Taoka²、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.Nagoya Univ. , Japan)

https://doi.org/10.7567/SSDM.2012.E-7-4