[E-8-2] Evolution of Electron Trapping under Positive-Bias Temperature Stressing of the HfO2/TiN Gate n-MOSFET

Y. Gao¹, D. S. Ang¹, C. D. Young², G. Bersuker² (1.Nanyang Technological Univ. , Singapore, 2.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2012.E-8-2