[E-8-2] Evolution of Electron Trapping under Positive-Bias Temperature Stressing of the HfO2/TiN Gate n-MOSFET

Y. Gao¹、D. S. Ang¹、C. D. Young²、G. Bersuker² (1.Nanyang Technological Univ. , Singapore、2.SEMATECH , USA)

https://doi.org/10.7567/SSDM.2012.E-8-2