[F-2-2] A 0.25 μm Gate AlGaN/GaN HEMT for X-band Using RELACS Process

H. Koyama¹、Y. Kamo¹、S. Miwa¹、Y. Yamamoto¹、K. Onoe¹、A. Inoue¹、Y. Hirano¹ (1.Mitsubishi Electric Corp., High Frequency &Optical Device Works , Japan)

https://doi.org/10.7567/SSDM.2012.F-2-2