A 0.25 μm Gate AlGaN/GaN HEMT for X-band Using RELACS Process

H. Koyama; Y. Kamo; S. Miwa; Y. Yamamoto; K. Onoe; A. Inoue; Y. Hirano

doi:https://doi.org/10.7567/SSDM.2012.F-2-2

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[F-2-2] A 0.25 μm Gate AlGaN/GaN HEMT for X-band Using RELACS Process

H. Koyama¹, Y. Kamo¹, S. Miwa¹, Y. Yamamoto¹, K. Onoe¹, A. Inoue¹, Y. Hirano¹ (1.Mitsubishi Electric Corp., High Frequency &Optical Device Works , Japan)

https://doi.org/10.7567/SSDM.2012.F-2-2

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