Characteristics of InAlN/GaN Heterostructures Fabricated by Regrowth Technique

M. Hiroki; N. Watanabe; N. Maeda; H. Yokoyama; K. Kumakura; H. Yamamoto

doi:https://doi.org/10.7567/SSDM.2012.F-2-3

2012 International Conference on Solid State Devices and Materials

Sep 25, 2012 - Sep 27, 2012
Kyoto International Conference Center, Kyoto, Japan

[F-2-3] Characteristics of InAlN/GaN Heterostructures Fabricated by Regrowth Technique

M. Hiroki^1,2, N. Watanabe¹, N. Maeda¹, H. Yokoyama¹, K. Kumakura², H. Yamamoto² (1.Photonics Labs., NTT Corporation, 2.Basic Research Labs., NTT Corporation , Japan)

https://doi.org/10.7567/SSDM.2012.F-2-3

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