Characteristics of InAlN/GaN Heterostructures Fabricated by Regrowth Technique

M. Hiroki; N. Watanabe; N. Maeda; H. Yokoyama; K. Kumakura; H. Yamamoto

doi:https://doi.org/10.7567/SSDM.2012.F-2-3

2012 International Conference on Solid State Devices and Materials

2012年9月25日〜 2012年9月27日
Kyoto International Conference Center, Kyoto, Japan

[F-2-3] Characteristics of InAlN/GaN Heterostructures Fabricated by Regrowth Technique

M. Hiroki^1,2、N. Watanabe¹、N. Maeda¹、H. Yokoyama¹、K. Kumakura²、H. Yamamoto² (1.Photonics Labs., NTT Corporation、2.Basic Research Labs., NTT Corporation , Japan)

https://doi.org/10.7567/SSDM.2012.F-2-3

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