[F-2-5] Suppression of off-state drain leakage current in AlGaN channel high electron mo-bility transistors on SiC substrate

T. Nanjo¹、Y. Suzuki¹、A. Imai¹、H. Okazaki¹、M. Suita¹、Y. Abe¹、E. Yagyu¹、H. Ohji¹ (1.Mitsubishi electric Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.F-2-5