[F-2-5] Suppression of off-state drain leakage current in AlGaN channel high electron mo-bility transistors on SiC substrate

T. Nanjo¹, Y. Suzuki¹, A. Imai¹, H. Okazaki¹, M. Suita¹, Y. Abe¹, E. Yagyu¹, H. Ohji¹ (1.Mitsubishi electric Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.F-2-5