[F-4-4] Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs

K. Tanaka¹, M. Ishida¹, T. Ueda¹, T. Tanaka¹ (1.Panasonic Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.F-4-4