[F-4-4] Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs

K. Tanaka¹、M. Ishida¹、T. Ueda¹、T. Tanaka¹ (1.Panasonic Corp. , Japan)

https://doi.org/10.7567/SSDM.2012.F-4-4