[F-7-1] High Quality SiO2/Al2O3 Gate Stack for GaN MOSFET

H. Kambayashi^1,2、T. Nomura¹、H. Ueda³、K. Harada⁴、Y. Morozumi⁴、K. Hasebe⁴、A. Teramoto²、S. Sugawa²、T. Ohmi² (1.Advanced Power Device Reserch Association、2.Tohoku Univ.、3.Tokyo Electron Tech. Deveropment Inst. Inc.、4.Tokyo Electron Tohoku Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.F-7-1