[F-7-1] High Quality SiO2/Al2O3 Gate Stack for GaN MOSFET

H. Kambayashi^1,2, T. Nomura¹, H. Ueda³, K. Harada⁴, Y. Morozumi⁴, K. Hasebe⁴, A. Teramoto², S. Sugawa², T. Ohmi² (1.Advanced Power Device Reserch Association, 2.Tohoku Univ., 3.Tokyo Electron Tech. Deveropment Inst. Inc., 4.Tokyo Electron Tohoku Ltd. , Japan)

https://doi.org/10.7567/SSDM.2012.F-7-1