[F-7-2] Interface characterization of Al2O3/AlGaN/GaN structure with inductively coupled plasma etching of AlGaN surface

Z. Yatabe¹, Y. Hori¹, S. Kim¹, T. Hashizume^1,2 (1.Hokkaido Univ., 2.JST-CREST , Japan)

https://doi.org/10.7567/SSDM.2012.F-7-2