[F-7-2] Interface characterization of Al2O3/AlGaN/GaN structure with inductively coupled plasma etching of AlGaN surface Z. Yatabe1、Y. Hori1、S. Kim1、T. Hashizume1,2 (1.Hokkaido Univ.、2.JST-CREST , Japan) https://doi.org/10.7567/SSDM.2012.F-7-2