[F-7-4] Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation

T. Oishi¹, K. Hayashi¹, Y. Yamaguchi¹, H. Otsuka¹, K. Yamanaka¹, M. Nakayama¹, Y. Miyamoto² (1.Mitsubishi Electric Corp., 2.Tokyo Tech. , Japan)

https://doi.org/10.7567/SSDM.2012.F-7-4